**HMC797LP5E: A 5 to 5 GHz GaAs pHEMT MMIC Power Amplifier for High-Frequency Applications**

The relentless demand for higher data rates and greater bandwidth in modern communication and radar systems drives the need for high-performance radio frequency (RF) components. Central to these systems is the power amplifier (PA), a critical element responsible for boosting signal strength with minimal distortion. The **HMC797LP5E**, a Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) Monolithic Microwave Integrated Circuit (MMIC) power amplifier, stands out as a premier solution engineered for **high-frequency applications** spanning from 5 GHz to 5 GHz.

Fabricated on an advanced GaAs pHEMT process, this MMIC amplifier is designed to deliver exceptional performance across its entire operating band. A key strength of the HMC797LP5E is its **impressive output power capability**, typically achieving up to +28 dBm of saturated power. This high output power is crucial for ensuring strong signal transmission and overcoming losses in the signal chain. Furthermore, the amplifier exhibits a high small-signal gain of 17 dB, which effectively boosts weaker input signals to the required levels. Its robust performance is complemented by a high output third-order intercept point (IP3) of approximately +38 dBm, underscoring its superior **linearity and dynamic range**. This makes it exceptionally well-suited for complex modulation schemes, such as 256-QAM, used in modern standards where linearity is paramount to maintaining signal integrity and minimizing error rates.

The amplifier’s architecture is designed for ease of integration and operational flexibility. It requires a single positive supply voltage ranging from +5V to +8V, simplifying power management design. The HMC797LP5E is also internally matched to 50 Ohms at both its input and output ports, significantly reducing the need for external matching components and streamlining the board design process. Housed in a compact, RoHS-compliant 5x5 mm QFN leadless package, it is ideal for space-constrained applications. This combination of high performance and integration makes it a versatile component for a wide array of demanding applications, including **point-to-point and point-to-multi-point radios**, **test and measurement equipment**, **satellite communications**, and **military and aerospace electronic systems**.

**ICGOOODFIND**: The HMC797LP5E is a high-performance, highly integrated MMIC power amplifier that delivers a powerful combination of high output power, excellent linearity, and wide bandwidth. Its robust design and ease of use make it an exceptional choice for designers tackling the challenges of next-generation high-frequency systems.

**Keywords**: GaAs pHEMT, MMIC Power Amplifier, High Linearity, 5 GHz Bandwidth, Saturated Output Power.