Infineon IPP320N20N3G: A High-Performance 200V OptiMOS Power MOSFET for Advanced Switching Applications
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon's OptiMOS™ power MOSFET family, with the IPP320N20N3G standing out as a premier 200V N-channel solution engineered for demanding switching applications. This device encapsulates the latest advancements in silicon and packaging technology, offering system designers a superior component to push the boundaries of performance.
A key metric for any power switch in applications like server and telecom SMPS, OR-ing solutions, and Class-D audio amplifiers is its conduction loss, primarily determined by the R DS(on). The IPP320N20N3G boasts an exceptionally low typical on-resistance of just 1.8 mΩ at 10 V (V GS), significantly reducing I²R losses. This translates directly into higher efficiency, cooler operation, and the potential for either a more compact thermal management solution or increased output power within the same form factor.
Beyond static losses, dynamic switching performance is critical. The device features optimized gate charge (Q G) and low internal capacitances (C iss, C oss, C rss). This combination ensures swift and clean switching transitions, which minimizes switching losses—a dominant loss factor at higher frequencies. The low gate charge also reduces the burden on the gate driver circuitry, allowing for simpler and more cost-effective driver designs. This makes the IPP320N20N3G an excellent candidate for high-frequency switch-mode power supplies (SMPS) aiming to shrink the size of magnetic components.
Recognizing that real-world circuits can experience voltage spikes, Infineon has designed this MOSFET with robustness and reliability as a core characteristic. It offers a high maximum allowable pulse current (I AS) and is qualified for avalanche ruggedness, providing a critical safety margin against unexpected transients and harsh operating conditions. This inherent durability enhances the long-term reliability of the end product.
The performance is delivered in a space-saving PQFN 8x8 mm package, which features an exposed top-side cooling pad. This package design provides an extremely low thermal resistance from junction to case (R thJC), enabling highly efficient heat transfer away from the silicon die to an external heatsink or the PCB itself. This superior thermal performance is essential for maintaining low junction temperatures under high load conditions, further ensuring device reliability.
ICGOOODFIND: The Infineon IPP320N20N3G is a high-performance 200V power MOSFET that excels by combining an ultra-low R DS(on) for minimal conduction losses, excellent switching characteristics for high-frequency operation, and superior thermal performance in a compact package. Its proven avalanche ruggedness makes it a robust and reliable choice for advanced power conversion systems where efficiency, power density, and reliability are paramount.
Keywords: Low RDS(on), High Frequency Switching, PQFN 8x8 Package, Avalanche Rugged, Power Density.
