Infineon IPD096N08N3G: High-Performance OptiMOS 3 Power MOSFET for Automotive and Industrial Applications

The relentless drive for higher efficiency, greater power density, and enhanced reliability in power electronics has established the power MOSFET as a critical component. For the most demanding automotive and industrial environments, the Infineon IPD096N08N3G stands out as a premier solution, leveraging the proven OptiMOS™ 3 technology platform to deliver exceptional performance.

Engineered to meet the rigorous standards of the automotive industry, this N-channel MOSFET is AEC-Q101 qualified, ensuring its robustness and longevity under the hood. It is specifically designed for low-voltage switching applications up to 80 V, making it an ideal choice for a wide array of uses. In the automotive sector, it excels in engine control modules, electric power steering (EPS), transmission control units, and fuel injection systems. Its high reliability is equally critical in industrial contexts, including power supplies, motor drives, and DC-DC converters.

The core of the IPD096N08N3G's superiority lies in its outstanding electrical characteristics. It boasts an extremely low typical on-state resistance (RDS(on)) of just 0.95 mΩ at 10 V, which is a benchmark figure for devices in its class. This ultralow resistance is the key to minimizing conduction losses, leading to significantly higher efficiency and reduced heat generation. This allows for more compact designs by reducing the need for large heat sinks or enabling higher power output within the same form factor.

Furthermore, the device features optimized switching performance, which helps to lower switching losses—a crucial factor in high-frequency applications. This combination of low RDS(on) and fast switching speed ensures that systems can operate cooler and more efficiently, directly contributing to improved overall system performance and energy savings. The MOSFET is housed in a TO-LL package, which offers a low profile and excellent thermal performance, facilitating better heat dissipation from the PCB.

The Infineon OptiMOS™ 3 technology also provides a high level of avalanche ruggedness and is designed to be highly resistant to parasitic turn-on, enhancing system stability and safety in unpredictable operational conditions.

ICGOOODFIND: The Infineon IPD096N08N3G is a top-tier power MOSFET that masterfully balances ultra-low conduction losses, robust switching capability, and superior thermal performance. Its automotive-grade qualification makes it a reliable and high-efficiency cornerstone for designing advanced power systems in both automotive and industrial markets, ensuring durability and peak performance.

Keywords: OptiMOS™ 3, Low RDS(on), Automotive Grade (AEC-Q101), High Efficiency, Power Switching.