Infineon BSC035N10NS5: High-Performance OptiMOS™ 5 Power MOSFET for Efficient Power Conversion

In the realm of modern power electronics, achieving higher efficiency, power density, and reliability is paramount. The Infineon BSC035N10NS5 stands out as a premier solution, engineered to meet these demanding requirements. As part of the advanced OptiMOS™ 5 100 V family, this power MOSFET is specifically designed to minimize power losses and maximize performance in a wide array of switching applications.

The core of this device's superiority lies in its exceptional low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance of just 3.5 mΩ at 10 V, it significantly reduces conduction losses. Simultaneously, its low gate charge (Q G) ensures swift switching transitions, which directly translates to lower switching losses. This optimal balance is crucial for applications operating at high frequencies, where efficiency gains are most critical. The result is a cooler running system, reduced need for heat sinking, and the potential for a more compact and cost-effective design.

Beyond raw electrical performance, the BSC035N10NS5 is housed in a SuperSO8 package, which offers a vastly superior thermal resistance compared to standard SO-8 packages. This allows the MOSFET to handle higher power levels without overheating, enhancing long-term reliability and robustness. Furthermore, the OptiMOS™ 5 technology provides an excellent body diode robustness, ensuring high reliability under hard commutation and reverse recovery conditions, which is a common challenge in bridge topology designs like motor drives and synchronous rectification.

This MOSFET is an ideal choice for a diverse range of applications, including:

Synchronous Rectification in switch-mode power supplies (SMPS) and server power units.

DC-DC Converters for telecom and computing infrastructure.

Motor Control and drive circuits in industrial automation.

Solar Inverters and other renewable energy systems.

ICGOOODFIND: The Infineon BSC035N10NS5 exemplifies the pinnacle of power MOSFET technology, delivering an unparalleled combination of ultra-low R DS(on), fast switching speed, and superior thermal performance. It is a cornerstone component for engineers striving to push the boundaries of efficiency and power density in their next-generation power conversion systems.

Keywords: OptiMOS™ 5, Low RDS(on), High Efficiency, Power MOSFET, Synchronous Rectification.