Infineon IRFML8244TRPBF: 30V Single N-Channel MOSFET in a Compact MLP 3x3 Package

The relentless drive towards miniaturization and higher efficiency in modern electronics places immense demands on power components. Addressing this need, the Infineon IRFML8244TRPBF stands out as a high-performance N-Channel MOSFET that delivers robust switching capabilities in an extremely small form factor. This device is engineered for applications where board space is at a premium and thermal performance cannot be compromised.

Encased in a compact MLP 3x3 (Micro Leadframe Package), this MOSFET measures a mere 3mm x 3mm with a profile of only 0.8mm. This minimal footprint is a critical advantage for space-constrained designs such as smartphones, tablets, wearables, and other portable consumer devices. Despite its tiny size, the package is designed for effective heat dissipation, helping to manage thermal loads during operation.

Electrically, the IRFML8244TRPBF is optimized for low-voltage applications, featuring a drain-source voltage (VDS) of 30V. Its key strength lies in its exceptionally low on-state resistance (RDS(on)), which is as low as 3.5 mΩ at a 10V gate drive. This low RDS(on) is paramount for minimizing conduction losses, leading to higher overall system efficiency, reduced heat generation, and extended battery life in portable products.

The MOSFET is also characterized by its logic-level gate threshold, making it fully compatible with modern microcontrollers and low-voltage logic circuits without requiring additional level-shifting circuitry. This simplifies design and reduces the total component count. Furthermore, its fast switching speed makes it an excellent choice for high-frequency power conversion circuits, including DC-DC converters, load switches, and power management units (PMUs).

ICGOOODFIND: The Infineon IRFML8244TRPBF is an optimal solution for designers seeking to maximize power density and efficiency. Its superior combination of an ultra-compact package, very low RDS(on), and logic-level control makes it a top-tier component for advanced portable and battery-powered applications.

Keywords: N-Channel MOSFET, Low RDS(on), MLP 3x3 Package, Logic-Level Gate, Power Management.