Infineon IPA65R310CFD: 650V CoolMOS™ CFD7 Power Transistor for High-Efficiency Applications

Release date:2025-11-10 Number of clicks:151

Infineon IPA65R310CFD: 650V CoolMOS™ CFD7 Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switch is a critical component whose performance directly dictates overall efficacy. The Infineon IPA65R310CFD, a 650V CoolMOS™ CFD7 transistor, emerges as a premier solution engineered to meet these challenges head-on, setting a new benchmark for performance in high-efficiency applications.

This superjunction MOSFET is built on Infineon’s groundbreaking CoolMOS™ CFD7 technology, which represents a significant leap forward. The technology ingeniously integrates a fast body diode and exceptional switching performance, a combination previously difficult to achieve. A key innovation is the incorporation of an additional diode within the MOSFET cell structure. This design drastically reduces the reverse recovery charge (Qrr), a major source of switching losses and electromagnetic interference (EMI) in hard-switching topologies. The result is a device that enables significantly higher switching frequencies without compromising efficiency. This allows designers to shrink the size of passive components like inductors and transformers, directly contributing to increased power density and reduced system size and cost.

The IPA65R310CFD boasts an impressive low figure-of-merit (RDS(on) x Coss), which is crucial for minimizing both conduction and switching losses. With a maximum on-state resistance of just 310mΩ, it ensures minimal power dissipation during conduction. Furthermore, its low effective output capacitance (Coss(eff)) enhances its performance in soft-switching applications such as LLC resonant converters, making it exceptionally versatile. Its high voltage rating of 650V provides a robust safety margin for operations off universal mains inputs (85 VAC – 305 VAC) and enhances reliability against voltage spikes.

These characteristics make the IPA65R310CFD ideally suited for a wide array of demanding applications. It is a perfect fit for server and telecom SMPS (Switch-Mode Power Supplies), where efficiency translates directly into lower operational costs and reduced cooling requirements. It also excels in industrial power supplies, solar inverters, EV charging stations, and high-performance computing—all environments where reliability, compact size, and energy efficiency are paramount.

ICGOOODFIND: The Infineon IPA65R310CFD CoolMOS™ CFD7 is a state-of-the-art power transistor that masterfully balances ultra-low switching losses with robust conduction performance. Its integrated fast body diode and superior switching characteristics empower designers to push the boundaries of efficiency and power density, making it an exceptional choice for the next generation of power conversion systems.

Keywords: CoolMOS™ CFD7, High-Efficiency, Fast Body Diode, Low Switching Losses, Power Density.

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