Infineon IPD105N04LG: High-Performance 60 V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. Addressing these critical demands, the Infineon IPD105N04LG stands out as a premier 60 V N-channel power MOSFET engineered using Infineon’s advanced OptiMOS™ technology. This device is specifically tailored for a broad spectrum of high-performance applications, including automotive systems, DC-DC converters, and motor control solutions.

A key highlight of the IPD105N04LG is its exceptionally low on-state resistance (RDS(on)) of just 1.05 mΩ (max). This ultra-low resistance is instrumental in minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. Such performance is vital in improving the overall energy efficiency of power systems, particularly in space-constrained or thermally challenging environments like engine control units (ECUs), electric power steering (EPS), and battery management systems (BMS).

The MOSFET is housed in a SuperSO8 package, which offers superior thermal and electrical characteristics compared to standard SO-8 packages. This robust packaging not only enhances power density but also improves heat dissipation, allowing the device to operate reliably under high-load conditions. Furthermore, the IPD105N04LG is AEC-Q101 qualified, ensuring it meets the stringent reliability standards required for automotive applications. This makes it a trusted component for both conventional and electric vehicle platforms.

Another significant advantage is its fast switching capability, which reduces switching losses in high-frequency circuits. This feature is especially beneficial in switch-mode power supplies (SMPS) and synchronous rectification stages, where efficiency at elevated frequencies is crucial. The combination of low gate charge and low RDS(on) enables designers to achieve higher power density and simpler cooling solutions.

Safety and durability are also core to its design. The device offers enhanced avalanche ruggedness and is designed to withstand high-energy pulses, contributing to system longevity and robustness in demanding operational scenarios.

ICGOOODFIND:

The Infineon IPD105N04LG exemplifies cutting-edge power MOSFET technology, delivering a blend of ultra-low resistance, high switching efficiency, and automotive-grade reliability. It is an ideal solution for designers seeking to optimize performance in high-current, high-frequency power applications.

Keywords:

OptiMOS Technology, Low RDS(on), Automotive Grade, SuperSO8 Package, High Efficiency