**The HMC987LP5ETR: Powering Next-Generation High-Frequency Systems**

In the demanding realm of high-frequency electronics, the **HMC987LP5ETR represents a significant advancement in amplifier technology**. This state-of-the-art GaAs MMIC (Gallium Arsenide Monolithic Microwave Integrated Circuit) medium power amplifier is specifically engineered for optimal performance within the extremely high-frequency (EHF) **Ka-band and Q-band spectrum**. These frequency ranges are crucial for applications requiring wide bandwidths and high data throughput, making the component indispensable for modern wireless systems.

Housed in a compact, **RoHS-compliant 5x5 mm 32-lead QFN package**, the HMC987LP5ETR is designed for high-density integration, a critical factor for space-constrained modern radio and sensor designs. Its robust architecture ensures reliable performance as a fundamental building block across a diverse array of cutting-edge applications. It is particularly vital for **point-to-point and point-to-multi-point radio** links that form the backbone of metropolitan and backhaul networks, enabling high-speed data transmission over long distances.

Furthermore, this amplifier is a key enabler for **SATCOM (Satellite Communication)** systems and the evolving infrastructure for **5G millimeter-wave networks**. In both cases, the ability to provide medium power amplification at these elevated frequencies directly supports higher data rates and more reliable connectivity. Beyond communications, the HMC987LP5ETR also finds a vital role in **high-resolution sensor systems**, including automotive radars and imaging systems, where signal integrity and power are paramount.

ICGOOODFIND: The HMC987LP5ETR stands out as a superior solution for high-frequency design challenges, integrating high performance, a compact form factor, and versatility for critical communications and sensing applications.

**Keywords:** Ka-band, Q-band, GaAs MMIC, Medium Power Amplifier, SATCOM